| 000 | 00896nam a22002657a 4500 | ||
|---|---|---|---|
| 999 |
_c10952 _d10952 |
||
| 001 | 9447 | ||
| 003 | IN-BhIIT | ||
| 005 | 20200625120621.0 | ||
| 008 | 200625b ||||| |||| 00| 0 eng d | ||
| 020 | _a9781785480966 (hbk) | ||
| 040 | _aIN-BhIIT | ||
| 041 | _aeng | ||
| 082 | 0 | 4 |
_a621.39732 _bPOS/P |
| 245 | 0 | 0 |
_aPlasma etching for CMOS device realization / _cedited by Nicolas Posseme |
| 260 |
_aUK : _bElsevier, _c2017. |
||
| 300 |
_ax, 121 pages : _billustrations ; _c24 cm. |
||
| 490 | 1 | _aElectronics engineering | |
| 504 | _aIncludes bibliographical references. | ||
| 650 | 0 |
_aMetal oxide semiconductors, Complementary _xDesign and construction. _913681 |
|
| 650 | 0 |
_aPlasma etching. _913682 |
|
| 650 | 7 |
_aMetal oxide semiconductors, Complementary _xDesign and construction. _913681 |
|
| 650 | 7 |
_aPlasma etching. _913682 |
|
| 700 | 1 |
_aPosseme, Nicolas, _eeditor. _913683 |
|
| 942 | _cTRB | ||