Parameter extraction and complex nonlinear transistor models / by Günter Kompa.

By:

Kompa, Günter [Author.]

Material type: Text

TextLanguage: English Series: Artech House microwave libraryPublication details: Norwood : LCC-in publication, 2020.Description: xxvii, 574 pages : illustrations ; 26 cmISBN:

9781630817442 (hb)

Subject(s):

Microwave devices -- Mathematical models

DDC classification:

621.3813 KOM/P

Summary: This resource covers modeling semiconductor field-effect device parameters using GaAs and GaN technology, including metal-semiconductor FETs, HEMTs, and HBTs. It also presents the Shockley model, explaining the relationship between geometric and material parameters and device performance.

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Holdings
Item type	Current library	Home library	Collection	Call number	Status	Date due	Barcode	Item holds
Technical Reference Book	Central Library, IIT Bhubaneswar	Central Library, IIT Bhubaneswar	SES	621.3813 KOM/P (Browse shelf(Opens below))	Available		10782

Total holds: 0

Includes bibliographical references and index

This resource covers modeling semiconductor field-effect device parameters using GaAs and GaN technology, including metal-semiconductor FETs, HEMTs, and HBTs. It also presents the Shockley model, explaining the relationship between geometric and material parameters and device performance.

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