Parameter extraction and complex nonlinear transistor models / by Günter Kompa.
Material type: TextLanguage: English Series: Artech House microwave libraryPublication details: Norwood : LCC-in publication, 2020.Description: xxvii, 574 pages : illustrations ; 26 cmISBN:- 9781630817442 (hb)
- 621.3813 KOM/P
Item type | Current library | Home library | Collection | Call number | Status | Date due | Barcode | Item holds | |
---|---|---|---|---|---|---|---|---|---|
Technical Reference Book | Central Library, IIT Bhubaneswar | Central Library, IIT Bhubaneswar | SES | 621.3813 KOM/P (Browse shelf(Opens below)) | Available | 10782 |
Includes bibliographical references and index
This resource covers modeling semiconductor field-effect device parameters using GaAs and GaN technology, including metal-semiconductor FETs, HEMTs, and HBTs. It also presents the Shockley model, explaining the relationship between geometric and material parameters and device performance.
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